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Home » Products » InGaAs SPAD 4×4 Array Component – OP501C

InGaAs SPAD 4×4 Array Component – OP501C

Photodiode module

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InGaAs SPAD 4×4 Array Component – OP501C

Photodiode module

OP501C InGaAs 4×4 single photon array detector component (hereinafter referred to as “detector”) consists  of InGaAs avalanche photodiode 4×4 array chip, active and passive fast quenching  circuit, refrigeration circuit, and signal control circuit.

The detector array size is 4×4 elements with 100 μm spacing between image centers, and the operating wavelength is in the near-infrared band from 1.0 to 1.65 μm.

The detector’s probe measurement of high sensitivity, able to detect weak light signals (single photon signals); detector  image elements in the adjustable pulse width within the free operation, and each image element independently of the output detection signals, processing output electrical signals, by the noise is very small.

Characterized by high sensitivity and simple system structure, the detector assembly can be applied in the fields of long-distance laser ranging, long-distance space optical communication, and optoelectronic radar.

OP501C

1.3 MB / pdf

OP300D

1.2 MB

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● Main photoelectric indicators

Parameterization Notation Test Condition Minimum Value Typical Value Maximum Values Unit
Optical performance parameters
photon efficiency PDE TA=25±5℃,Tth =-30℃± 5℃,λ=1570±50 nm. T=0.8μs±0.1μs 10 15 — %
dark count rate DCR     (PDE=10%) 10 kHz
backpulse probability APP     (PDE=10%) 20 %
1.the working wavelength:can be in the working wavelength range of optional standard narow band filter. 2.Tth:InGaAs avalanche photodiode 4×4 array chip operating temperature. 3.T:dead time. 4.Ambient temperature for testing the above parameters:TA=25±5℃
Parameterization Notation Test Condition Minimum Value Typical Value Maximum Values Unit
Optical performance parameters
photon efficiency PDE T\(_{A}\)=25±5℃,T\(_{th}\) =-30℃± 5℃, λ=1570±50 nm. \(_{T}\)=0.8μs±0.1μs 10 15 – %
dark count rate DCR     (PDE=10%) – – 10 kHz
backpulse probability APP     (PDE=10%) – – 20 %
1.the working wavelength:can be in the working wavelength range of optional standard narow band filter. 2.T\(_{th}\): InGaAs avalanche photodiode 4×4 array chip operating temperature. 3.T: dead time. 4.Ambient temperature for testing the above parameters:T\(_{A}\)=25±5℃

● Parameter setting range and recommended operating conditions

Parameterization Notation Test Condition Minimum Value Typical Value Maximum values Unit
Detector Specifications and Configuration Parameters
Array size M – 4×4 –
Size of target surface T\(_{s}\) – 0.4×0.4 mm
pixel center distance D – – 100 – μm
pixel spacing D\(_{G}\) – – – 20 μm
operating wavelength λ – 1000 – 1650 μm
Output signal amplitude V\(_{out\) – 2.5 3.3 V
serial port baud rate Baud – – 115200 – Baud/s
power wastage PDC V\(_{IN}\)=5V,T\(_{th}\)=-30℃±5℃ – 15 – W
Input Voltage V\(_{IN}\) – 5.0 – V
Input Current I\(_{IN}\) V\(_{IN}\)=5V, T\(_{th}\)=-30℃±5°℃ – 3.0 – A
Operating Temperature T\(_{A}\) – -40 – 55 ℃
weights W\(_{t}\) – – 180 g
Detector Size S\(_{C}\) –    75×50×28 mm
Serial Number Parameters Rated Value
Recom 1 Detector operating temperature -30℃~0℃
mendation 2 dead time value 0.80μs
Referral 3 Avalanche voltage threshold adjustment See test report for details
conditions 4 Geiger avalanche comparison voltage setting 0.45V to 0.90V

● Typical Characteristic Curve

wawelength

Fig.1 InGaAs spectral response characteristic curve

V

Fig.2 InGaAsP spectral response characteristic curve

● Shape,Dimensions and Pinout Definitions (in mm)

wawelength

Fig.1 InGaAs spectral response characteristic curve

Fig.2 InGaAsP spectral response characteristic curve

▶ Output Port Definitions

Figure 5 Electrical connector arrangement and numbering

Figure 6 J31J-2 Port Numbering

Electrical Connector Number Electrical Connector Type Functionality
1 SSMA Synchronized signal output port
2 SSMA Synchronized signal input port
3 J63A-31 UARTand 16-channel pixel signal output
4 J30J-2 +5.0V single power supply
The J31J-2 port numbers are shown in Figure 9.
Pin Number Name (of A Thing) Functionality Pin Number Name (of A Thing) Functionality
1 GND grounding port 2 POWER  + 5V +5V power
positive input port

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Optoelectronic Integration

InGaAs Avalanche Photodiode
InGaAs Negative Feedback Avalanche Photodiode
InGaAs Large Panel Linear Array Focal Plane Detector
InGaAs Small Panel Linear Array Focal Plane Detector
InGaAs Array Focal Plane Sensor GD-NIR32030M
InGaAs Array Focal Plane Sensor GD-NIR64015M

Sensitive detection

InGaAs Free Running Single Photon Detector
InGaAs Deep Cooled Free Running Single Photon Detector
Miniaturized Free Running Single Photon Detector QCD600C
Si Free Running Single Photon Detector
InGaAs Gated Single Photon Detector
InGaAs Avalanche Photon Detector
InGaAs Single Photon 4x4 Array Detector Assembly
InGaAs Geiger Avalanche Focal Plane Module
InGaAs Linear Focal Plane Camera
InGaAs Face Array Focal Plane Camera
Visible Light+Near-Infrared Camera

Scientific Research Instruments

Cold Atomic Gravimeter
Femtosecond Laser Frequency Comb
Single Photon Ranging System
Single Photon Imaging System

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