-Working wavelength:0.95μm~1.65μm;
-High detection sensitivity (single photon level detection capability);
-Internal integrated three-stage cooler;
-Free Space Optical/FC Pluggable Optical Interface/Multimode Fiber(62.5um)optional.
Linear mode parameters
| Characteristic parameters | Test conditions (TC=25±5℃ unless otherwise specified) | Minimal | Greatest | Unit | |
| Effective detection surface diameter d | – | 25 | – | μm | |
| Spectral Response Range | – | 950 | 1650 | nm | |
| Reverse breakdown voltage V\(_{BR}\) | I\(_{D}\)=10 μA,T\(_{C}\)=22℃ | 60 | 85 | V | |
| Responsiveness R\(_{e}\) | λ=1.55μm,V\(_{R}\)=V\(_{BR}\)-1V, φe=1μw | 8 | – | A/W | |
| Dark Current l\(_{D}\) | V\(_{R}\)=V\(_{BR}\)-1V, φe=0 | – | 1 | nA | |
| Capacitance C\(_{tot}\) | V\(_{R}\)=V\(_{BR}\)-1V, f=1MHz | – | 0.6 | pF | |
| Temperature coefficient of breakdown voltage η | T\(_{C}\)=-45~+30℃,I\(_{R}\)=10μA, φe=0 | 0.10 | 0.15 | V/℃ | |
Geiger model parameters
| parameters | Test conditions | Min | Max | Unit |
| Single Photon Detection Efficiency PDE | T\(_{A}\)=-40±5℃, μ=1,f\(_{g}\)=1.25 kHz, f\(_{g}\)=625kHz, DCR≤3.0 kcps, λ=1.55μm | 20 | – | % |
| Dark Count Rate DCR | T\(_{A}\)=-40±5℃, μ=1, f\(_{g}\)=1.25 kHz, SPDE≥20%, λ=1.55μm | – | 3 | kcps |
| Post-Pulse Probability APP (500 ns) | T\(_{A}\)=-40±5℃, μ=1, fg=1.25 Ghz, f\(_{g}\)=625kHz, DCR≤3.0 kHz, SPDE≥20%, λ=1.55μm | – | 4 | % |
| Time Jitter T\(_{J}\) | SPDE=20% | – | 200 | ps |
| Note : λ: Spectral response; T\(_{A}\): device temperature; μ: under a certain average photon number per pulse; f\(_{P}\): versus the photon trigger repetition rate. | ||||
| Serial Number | Parameters | Rated Value | |
| Parameter setting range | 1 | Storage temperature T\(_{STG}\) | -50℃~+85℃ |
| 2 | Operating ambient temperature T\(_{C}\) | -50℃~60℃ | |
| 3 | Welding temperature T\(_{sld}\)(time) | 260℃(10s) | |
| 4 | Reverse DC bias voltage V\(_{DC}\) | VBR+5V | |
| 5 | Input optical power φe (continuous) | 1mW | |
| 6 | Forward current \(_{IF}\)(continuous) | 200μA | |
| 7 | Electrostatic Discharge Sensitivity ESD | ≥300V | |
| 8 | TEC Voltage | 6.8V | |
| 9 | TEC Current | 1.0 A | |
| Serial Number | Parameters | Rated Value | |
| Recommendation Working Conditions | 1 | APD chip operating temperature T\(_{th}\) | 1-50℃~-30℃ |
| 2 | Reverse DC bias voltage V\(_{DC}\) | V\(_{BR}\) + 1V to V\(_{BR}\)+5V | |
Optical Wavelength Range
Figure 1.InGaAs spectral response curve
V
Figure 2.Photocurrent and dark current vs reverse voltages
Figure 3.mechanical dimension 1 (Unmarked tolerance±0.1mm)
Fig.4 External Dimensions 2 (Unmarked dimension tolerance±0.1mm)
| NO. | Pin Definitions | Pin Function |
| 1 | TEC- | TEC Negative |
| 2 | NTC | Temperature Sensitive Resistor Terminal |
| 3 | NTC | Temperature Sensitive Resistor Terminal |
| 4 | TEC+ | TEC Positive |
| 5 | APD-N | Avalanche Photodiode Negative |
| 6 | APD-P | Avalanche Photodiode Positive |
| TEC\NTC Electrical Characteristics NTC(Negative Temperature Coefficient): R\(_{T}\)=10kΩ@25℃, β=3450,5%。 TEC(Thermoelectric cooler):I\(_{MAX}\)=1.0 A, V\(_{MAX}\)=6.8V, T\(_{HMAX}\)=200℃。 | ||
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