OP410D is an InGaAs avalanche photodiode photon counting module with Geiger mode operation, single-photon sensitivity, and monolithic integration of negative feedback resistor.Based on the high gain characteristic of Geiger mode, the product multiplies the detected photon Geiger into macroscopic current; the negative feedback resistor carries out dynamic voltage dividing to realize the self-quenching and self-recovery of the Geiger avalanche electric field in the avalanche photodiode.
OP410D internal integration of NFAD chip, chip capacitors, thermistors, ceramic carriers, thermoelectric cooler and other components, the overall butterfly shell package, metalized fiber optic components coupled to form a hermetically sealed single-channel module.The incoming optical interface is a multi-mode (62.5μm)fiber with FCUPC connector (0.9mm tight protection tube).
Linear mode parameters
| Characteristic parameters | Test conditions(TC=25±5℃ unless otherwise specified) | Minimal | Greatest | Unit |
| Spectral Response Range | – | 950 | 1650 | nm |
| Reverse breakdown voltage V\(_{BR}\) | I\(_{R}\)=10 μA, Φe=0 | 60 | 85 | V |
| Responsiveness \(_{Re}\) | Φe=1μW,VR=(V\(_{BR}\)-1)V, λ=1550nm±50nm | 8 | – | A/W |
| Dark Current /\(_{D}\) | V\(_{DC}\)=(V\(_{BR}\)-1)V,φe=0 | – | 1 | nA |
| Capacitance C\(_{tot}\) | V\(_{DR}\)=(V\(_{BR}\)-1)V, f=1MHz | – | 0.6 | pF |
| Integrated resistor value Rs | I\(_{F}\)=200μA, φe=0 | 200±50 | KΩ | |
| Temperature coefficient of breakdown voltage η | Tc=-45～+30℃, I\(_{R}\)=10μA, pe=0 | 0.1 | 0.15 | V/℃ |
Geiger mode parameters
| Characteristic parameters | Test condition(TC=-40±3℃,fp=50KHz) | Minimal | Greatest | Unit |
| Single Photon Detection Efficiency PDE | λ=1550nm | 15 | – | % |
| Dark Count Rate DCR | PDE=15% | – | 10 | kcps |
| Post-Pulse Probability APP | PDE=15%, λ=1550nm, △t=1us | – | 15 | % |
| Pulse output amplitude Vout | PDE=15%, R=50Ω | 0.5 | – | ps |
| Note: λ is the wavelength of incident light, \(_{FP}\) is the frequency of optical pulse signal, and R is the sampling resistance. | ||||
| Serial Number | Parameters | Rating Value | |
| Absolutely Maximum Rating | 1 | Storage temperature T\(_{STG}\) | -50℃~+85℃ |
| 2 | Operating ambient temperature T\(_{C}\) | -50℃~60℃ | |
| 3 | Welding temperature Tsld(time) | 260°C(10s) | |
| 4 | Reverse DC bias voltage V\(_{DC}\) | V\(_{BR}\)+5V | |
| 5 | Input optical power φe (continuous) | 1mW | |
| 6 | Forward current IF (continuous) | 200μA | |
| 7 | Electrostatic Discharge Sensitivity ESD | ≥300V | |
| 8 | Pigtail Tension | 3.0N | |
| serial number | parameters | Rating Value | |
| Recomm endation Referral working conditions | 1 | APD chip operating temperature T\(_{th}\) | -50℃~-30℃ |
| 2 | Reverse DC bias voltage V\(_{DC}\) | V\(_{BR}\)+1V to V\(_{BR}\)+5V | |
Voltage(V)
Fig.1 Photocurrent and dark current curves
Fig.2 Temperature coefficient of breakdown voltage
Figure 3 Product form factor
The external dimensions of the product are shown in Table 2.
| notation | minimum value | nominal value | maximum value | notation | minimum value | nominal value | maximum value | notation | minimum value | nominal value | maximum value |
| H1 | 7.4 | 7.45 | 7.5 | L2 | 10 | 13.5 | 30 | L8 | 8.7 | 8.9 | 9.1 |
| H2 | 1.8 | 2 | 2.2 | L3 | 4.05 | 4.25 | 4.45 | L9 | 12.5 | 12.7 | 12.9 |
| H3 | 7.57 | 7.77 | 7.97 | L4 | 3.74 | 3.94 | 4.14 | L10 | 38.2 | 38.4 | 38.6 |
| H4 | 10.5 | 10.7 | 10.9 | L5 | 21.8 | 22 | 22.2 | ф1 | 3 | 3.5 | 6.6 |
| L0 | 1000 | – | – | L6 | 25.8 | 26 | 26.2 | ф2 | 0.4 | 0.5 | 0.6 |
| L1 | 17.3 | 17.5 | 17.7 | L7 | – | 2.54 | – | ф3 | 2.2 | 2.4 | 2.6 |
The external dimensions of the product are shown in Table 2.
| Outlet Numbering | Name (symbol) | Outlet Numbering | name (of a thing) |
| 1 | Diode N-pole(APD_N) | 5 | Chiller Negative(TEC-) |
| 2 | Shell Ground (GND) | 6 | Thermistor (R_th) |
| 3 | Diode P-pole (APD_P) | 7 | Thermistor (R_th) |
| 4 | Signal Ground (DGND) | 8 | Chiller Positive(TEC+) |
| TEC\NTC Electrical Parameters NTC(Temperature Sensitive Resistor):R\(_{T}\)=10kΩ@25℃, β=3450, 5%. TEC(temperature difference cooler): I\(_{MAX}\)=0.8A,V\(_{MAX}\)=11.9 V, T\(_{HMAX}\)=200℃ . | |||
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