The product responds to near-infrared spectroscopy and has characteristics such as high sensitivity, low noise, and low dark current. It is widely used in various optoelectronic detection fields. The detector consists of an InGaAs photodiode array chip and a CMOS signal processing circuit, which are conductive connected through an indium (In) convex dot array. Each channel inside the readout circuit consists of a charge amplification circuit, a CDS gain circuit, a sampling and holding circuit, a column buffer circuit, and control circuit logic. The input stage adopts a CTIA structure with multiple levels of charge voltage conversion gain, supporting anti corona and correlated double sampling (CDS) noise reduction functions, with two different forms of cooling and non cooling.
-Long linear array, Small panel , high resolution
-20KHzHigh pixel readout rate ( 14MHz ), maximum line frequency 20KHz
-Four gain optional, suitable for multi-scenario application requirements
-Ceramic/metal double in-line package
522KB
TYPE | PRODUCT MODEL | GD-NIR512L2 | GD-NIR1024L1 |
Linear array Specifications | Component type | InGaAs p-on-n Type | |
Array size | 2×512 | 1×1024 | |
Pixel size | 25umx25um | 12.5umx12.5um | |
Photosensitive surface size | 0.05mmx12.8mm | ||
Packaging forms | Ceramic/metal shell resin packaging | ||
Photoelectricity Characteristic @22±3℃ | Maximum row frequency | ≥20KHz | |
Maximum pixel readout rate | ≥14MHz | ||
Integration time | ≥10us | ||
Spectral response range | 0.92~1.7um | ||
Readout noise | ≤60e(RMS) @10KHz,High Gain | ≤100e(RMS) @10KHz,High Gain | |
Dynamic range | ≥60dB | ≥65dB | |
Electric Characteristic | Operating temperature range | -20℃~ +60℃ | |
Maximum working power consumption | 300mW,Refrigeration 8.0W(TEC) | 250mW,Refrigeration 8.0W(TEC) | |
Pixel offset range | -0.5V~0.1V | ||
Esd antistatic grade | 800V~1000V |
-Detection of agricultural products
-Line scan imaging
-Industrial Nondestructive Testing
-Garbage classification
-Solar silicon wafer detection
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