This product is a single photon level high sensitivity InGaAs negative feedback avalanche photodiode (NFAD)that operates on the Geiger mode principle and is integrated into an advanced refrigeration butterfly packaging structure. The core technology of this device lies in its NFAD chip,which provides a stable low-temperature working environment through a built-in thermoelectric cooler (TEC),ensuring that the chip operates at low dark counting rates and high quantum efficiency.
The product comes in two packaging structures:T0 coaxial tail fiber and integrated cooling butterfly shape.It can also be customized and developed according to customer application needs.
-High responsiveness
-Low capacitance, low noise
-High operating frequency
-High reliability
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| PARAMETER | TECHNICAL INDEX |
| Reverse breakdown voltage | \( V_{BR} \leq 100V \ (\text{at} \ T_{amb} = 25^\circ C \pm 3^\circ C, \ I_R = 10\mu A, \ \Phi_e = 0) \) |
| Detector efficiency | \( \text{PDE} \geq 10\% \ (\lambda = 1550\, \text{nm} \pm 50\, \text{nm}, \ T_d = 1000\, \text{ns}, \ f_{\text{laser}} = 50\, \text{kHz}, \ u = 1, \ T_{th} = -30^\circ\text{C} \pm 3^\circ\text{C}) \) |
| Dark count rate | \( \text{DCR} \leq 20\, \text{kcps} \ (@\text{PDE} = 10\%, \ T_d = 1000\, \text{ns}, \ T_{th} = -30^\circ\text{C} \pm 3^\circ\text{C}) \) |
| Post-pulse probability | \( \text{AP} \leq 30\% \ (@\text{PDE} = 10\%, \ \lambda = 1550\, \text{nm} \pm 50\, \text{nm}, \ T_d = 1000\, \text{ns}, \ f_{\text{laser}} = 50\, \text{kHz}, \ u = 1, \ T_{th} = -30^\circ\text{C} \pm 3^\circ\text{C}) \) |
| Time jitter | \( \leq 350\, \text{ps} \ (@\text{PDE} = 10\%, \ \lambda = 1550\, \text{nm} \pm 50\, \text{nm}, \ T_d = 1000\, \text{ns}, \ f_{\text{laser}} = 50\, \text{kHz}, \ u = 1, \ T_{th} = -30^\circ\text{C} \pm 3^\circ\text{C}) \) |
| Storage temperature | -55~75℃ |
| Working temperature | -50~70℃ |
| Maximum incident light power | 10nW |
| Electrostatic discharge sensitivity | 250V |
λ: laser wavelength.
\(\mathsf{T}_{\mathrm{th}}\)、\(\mathsf{T}_{\mathrm{amb}}\): They are the working temperature of the NFAD chip(converted by the thermistor value on the NFAD chip substrate)
and the working temperature of the product environment.
\(\Phi_{\mathrm{e}}\)、μ: They are the average laser power and the average photon number per pulse, respectively.
\(\mathrm{f}_{\mathrm{laser}}\): It is the frequency of light pulse.
\(\mathrm{T}_{\mathrm{d}}\): NFAD chip dead time.
-High speed fiber optic communication
-Optical fiber sensing
-Fast light pulse detection
-Laser ranging
-Single-photon detection