OP501C InGaAs 4×4 single photon array detector component (hereinafter referred to as “detector”) consists of InGaAs avalanche photodiode 4×4 array chip, active and passive fast quenching circuit, refrigeration circuit, and signal control circuit.
The detector array size is 4×4 elements with 100 μm spacing between image centers, and the operating wavelength is in the near-infrared band from 1.0 to 1.65 μm.
The detector’s probe measurement of high sensitivity, able to detect weak light signals (single photon signals); detector image elements in the adjustable pulse width within the free operation, and each image element independently of the output detection signals, processing output electrical signals, by the noise is very small.
Characterized by high sensitivity and simple system structure, the detector assembly can be applied in the fields of long-distance laser ranging, long-distance space optical communication, and optoelectronic radar.
1.3 MB / pdf
Parameterization | Notation | Test Condition | Minimum Value | Typical Value | Maximum Values | Unit |
Optical performance parameters | ||||||
photon efficiency | PDE | TA=25±5℃,Tth =-30℃± 5℃,λ=1570±50 nm. T=0.8μs±0.1μs | 10 | 15 | — | % |
dark count rate | DCR (PDE=10%) | 10 | kHz | |||
backpulse probability | APP (PDE=10%) | 20 | % | |||
1.the working wavelength:can be in the working wavelength range of optional standard narow band filter. 2.Tth:InGaAs avalanche photodiode 4×4 array chip operating temperature. 3.T:dead time. 4.Ambient temperature for testing the above parameters:TA=25±5℃ | ||||||
| Parameterization | Notation | Test Condition | Minimum Value | Typical Value | Maximum Values | Unit |
| Optical performance parameters | ||||||
| photon efficiency | PDE | T\(_{A}\)=25±5℃,T\(_{th}\) =-30℃± 5℃, λ=1570±50 nm. \(_{T}\)=0.8μs±0.1μs | 10 | 15 | – | % |
| dark count rate | DCR (PDE=10%) | – | – | 10 | kHz | |
| backpulse probability | APP (PDE=10%) | – | – | 20 | % | |
| 1.the working wavelength:can be in the working wavelength range of optional standard narow band filter. 2.T\(_{th}\): InGaAs avalanche photodiode 4×4 array chip operating temperature. 3.T: dead time. 4.Ambient temperature for testing the above parameters:T\(_{A}\)=25±5℃ | ||||||
| Parameterization | Notation | Test Condition | Minimum Value | Typical Value | Maximum values | Unit |
| Detector Specifications and Configuration Parameters | ||||||
| Array size | M | – | 4×4 | – | ||
| Size of target surface | T\(_{s}\) | – | 0.4×0.4 | mm | ||
| pixel center distance | D | – | – | 100 | – | μm |
| pixel spacing | D\(_{G}\) | – | – | – | 20 | μm |
| operating wavelength | λ | – | 1000 | – | 1650 | μm |
| Output signal amplitude | V\(_{out\) | – | 2.5 | 3.3 | V | |
| serial port baud rate | Baud | – | – | 115200 | – | Baud/s |
| power wastage | PDC | V\(_{IN}\)=5V,T\(_{th}\)=-30℃±5℃ | – | 15 | – | W |
| Input Voltage | V\(_{IN}\) | – | 5.0 | – | V | |
| Input Current | I\(_{IN}\) | V\(_{IN}\)=5V, T\(_{th}\)=-30℃±5°℃ | – | 3.0 | – | A |
| Operating Temperature | T\(_{A}\) | – | -40 | – | 55 | ℃ |
| weights | W\(_{t}\) | – | – | 180 | g | |
| Detector Size | S\(_{C}\) | – | 75×50×28 | mm | ||
| Serial Number | Parameters | Rated Value | ||||||||||||||||||||
| Recom | 1 | Detector operating temperature | -30℃~0℃ | |||||||||||||||||||
| mendation | 2 | dead time value | 0.80μs | |||||||||||||||||||
| Referral | 3 | Avalanche voltage threshold adjustment | See test report for details | |||||||||||||||||||
| conditions | 4 | Geiger avalanche comparison voltage setting | 0.45V to 0.90V | |||||||||||||||||||
wawelength
Fig.1 InGaAs spectral response characteristic curve
V
Fig.2 InGaAsP spectral response characteristic curve
wawelength
Fig.1 InGaAs spectral response characteristic curve
Fig.2 InGaAsP spectral response characteristic curve
▶ Output Port Definitions
Figure 5 Electrical connector arrangement and numbering
Figure 6 J31J-2 Port Numbering
| Electrical Connector Number | Electrical Connector Type | Functionality | ||||||
| 1 | SSMA | Synchronized signal output port | ||||||
| 2 | SSMA | Synchronized signal input port | ||||||
| 3 | J63A-31 | UARTand 16-channel pixel signal output | ||||||
| 4 | J30J-2 | +5.0V single power supply | ||||||
| The J31J-2 port numbers are shown in Figure 9. | ||||||||
| Pin Number | Name (of A Thing) | Functionality | Pin Number | Name (of A Thing) | Functionality | |||
| 1 | GND | grounding port | 2 | POWER + 5V | +5V power | |||
| positive input port | ||||||||