-Working wavelength:0.95μm~1.65μm;
-Designed for single photon detection applications;
-Internal integrated three-stage TEC cooler;
-Butterfly hermetically sealed module with pigtail.
1.2 MB / pdf
Linear mode parameters
| Characteristic parameters | Test conditions(TC=25±5℃ unless otherwise specified) | Minimal | Greatest | Unit |
| Effective detection surface diameter d | – | 25 | – | μm |
| Spectral Response Range | – | 950 | 1650 | nm |
| Reverse breakdown voltage V\(_{BR}\) | I\(_{R}\)=10 μA, Φe=0 | 60 | 85 | V |
| Responsiveness Re | Φe=1μW, VR=(V\(_{BR}\)-1)V, λQ=1550nm±50nm | 8 | – | A/W |
| Dark Current =I\(_{D}\) | V\(_{DC}\)=(V\(_{BR}\)-1)V, Φe=0 | – | 1 | nA |
| Capacitance C\(_{tot}\) | V\(_{DC}\)=(V\(_{BR}\)-1)V,f=1MHz | #VALUE! | 0.2 | pF |
| Temperature coefficient of breakdown voltage η | T\(_{C}\)=-45～+30℃,I\(_{R}\)=10μA,Φe=0 | 0.1 | 0.2 | V/℃ |
Geiger model parameters
| Characteristic Parameters | Test Condition | Minimal | Greatest | Unit |
| Single Photon Detection Efficiency PDE | T\(_{A}\)=-40±5℃,μ=1,f\(_{g}\)=1.0 GHz, f\(_{p}\) = 500kHz, DCR<= 2.5kHz, λ = 1.55μm | 10 | – | % |
| Dark Count Rate DCR | T\(_{A}\)=-40±5℃,f\(_{g}\)=1.0 GHz. SPDE =20%, λ=1.55μm | – | 2.5 | kHz |
| Post-Pulse Probability APP (500 ns) | T\(_{A}\) =-40±5℃,μ=1,fg=1.0 GHz, fp=500 kHz. DCR≤3.0 kHz,SPDE =10%,λ=1.55 μm | – | 4 | % |
| Time Jitter T\(_{J}\) | SPDE=10% | – | 300 | ps |
| Note: λ is the wavelength of inctdent lignt, TA is the value of test temperature, is the average number of photons per pulse, fg is the frequency of gating signal and fp is the frequency of optical pulse signal. | ||||
| Serial Number | Parameters | Rated Value | |
| Absolutely. Maximum Rating | 1 | Storage temperature T\(_{STG}\) | -5℃~+85℃ |
| 2 | Operating ambient temperature T\(_{C}\) | -50℃~60℃ | |
| 3 | Welding temperature Tsld (time) | 260℃(10s) | |
| 4 | Reverse DC bias voltage V\(_{DC}\) | V\(_{BR}\) +5V | |
| 5 | Input optical power φe (continuous) | 1mW | |
| 6 | Forward current IF (continuous) | 200μA | |
| 7 | Electrostatic Discharge Sensitivity ESD | ≥300V | |
| 8 | Pigtail Tension | 3.0N | |
| 9 | TEC Voltage | 11.9V | |
| 10 | TEC Current | 0.8 A | |
| Serial Number | Parameters | Rated Value | |
| Recomm endation | 1 | APD chip operating temperature T\(_{th}\) | -50℃~-30℃ |
| working conditions | 2 | Reverse DC bias voltage V\(_{DC}\) | V\(_{BR}\) +1V to V\(_{BR}\) +5V |
Voltage(V)
Fig.1 Photocurrent and dark current curves
Fig.2 Temperature coefficient of breakdown voltage
Figure 3 Product form factor
| notation | minimum value | nominal value | maximum value | notation | minimum value | nominal value | maximum value | notation | minimum value | nominal value | maximum value |
| H1 | 6 | – | 6.6 | L2 | 10 | – | 30 | L8 | 8.6 | – | 9.2 |
| H2 | 0.8 | – | 1.2 | L3 | 4 | – | 4.6 | L9 | 12.4 | – | 13 |
| H3 | 6.1 | – | 6.6 | L4 | 2.1 | – | 2.5 | L10 | 28.4 | – | 29 |
| H4 | 9 | – | 10.5 | L5 | 21.7 | – | 22.3 | ф1 | 3 | – | 6.6 |
| L0 | 1000.0 | – | – | L6 | 17.8 | – | 18.2 | ф2 | 0.35 | – | 0.50 |
| L1 | 13.2 | – | 13.8 | L7 | – | 2.54 | – | ф3 | 2.2 | – | 2.6 |
Fig.4 Pin arrangement and numbering (top view)
| Outlet Numbering | Name(symbol) | Outlet Numbering | name (of a thing) |
| 1 | Diode P-pole (APD P) | 5 | Chiller Negative(TEC-) |
| 2 | Signal Sampling End(OUT) | 6 | Thermistor (R th) |
| 3 | Not Connected (NC) | 7 | Thermistor(R th) |
| 4 | Diode N-pole (APD N) | 8 | Chiller Positive(TEC+) |
| TEC\NTC Electrical Parameters NTC(Temperature Sensitive Resistor):\(_{RT}\) =10kΩ@25℃, β=3450, 5%. TEC (temperature difference cooler):\(_{IMAX}\) =0.8 A,\(_{VMAX}\) =11.9V,\(_{THMAX}\) =200℃ . | |||