OP301D is an InGaAs avalanche photodiode photon counter device with a monolithic negative feedback resistor. Based on the high gain characteristics of Geiger mode. the product multiplies the detected photon Geiger into macroscopic current. the negative feedback resistor performs dynamic voltage dividing to realize the self-quenching and self.recovery of the Geiger avalanche electric field in the avalanche photodiode.
OP301D adopts TO coaxial pigtail package structure, and the incoming optical interface is single/multimode fiber with FC/UPC connector (0.9mm tight sleeve protection tube).
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Linear mode parameters
| Characteristic Parameters | Test conditions (Tc=25±5℃ unless otherwise specified) | Minimal | Greatest | Unit |
| Spectral Response Range | – | 950 | 1650 | nm |
| Reverse breakdown voltage V\(_{BR}\) | I\(_{D}\)=100nA | 60 | 85 | V |
| Responsiveness Re | λ=1.55μm,V\(_{R}\)=V\(_{BR}\)-1V, φe=1μw. | 8 | – | A/W |
| Dark Current I\(_{D}\) | V\(_{R}\) =V\(_{BR}\)-1V, φe=0 | – | 1 | nA |
| Capacitance C\(_{tot}\) | V\(_{R}\) =V\(_{BR}\)-1V,f=1MHz | – | 0.6 | pF |
| Integrated resistor value R\(_{s}\) | /\(_{F}\)=200μA, φe=0 | 200±50 | KΩ | |
| Temperature coefficient of | T\(_{C}\)=-45～+30℃,/\(_{R}\) =10μA,φe=0 | 0.10 | 015 | V/℃ |
| breakdown voltage η | ||||
Geiger model parameters
| Characteristic Parameters | Test Condition (Tc=-40±3℃,fp=50KHz) | Minimal | Greatest | Unit |
| Single Photon Detection | λ=1550nm | 15 | – | % |
| Efficiency PDE | ||||
| Dark Count Rate DCR | PDE=15% | – | 10 | kcps |
| Post-Pulse Probability APP | PDE=15%, λ=1550nm,△t=1us | – | 15 | % |
| Pulse output amplitude V\(_{out}\) | PDE=15%,R=500Ω | 0.5 | – | mV |
| Note: λis the wavelength of incident light,f\(_{p}\) is the frequency of optical pulse signal,and R is the sampling resistance. | ||||
| Serial Number | Parameters | Rating Value | |
| Absolutely Maximum Rating | 1 | Storage temperature T\(_{STG}\) | -50℃~+85℃ |
| 2 | Operating ambient temperature T\(_{C}\) | -50℃~60℃ | |
| 3 | Welding temperature T\(_{sld}\)(time) | 260°C(10s) | |
| 4 | Reverse DC bias voltage V\(_{DC}\) | V\(_{BR}\)+5V | |
| 5 | Input optical power φe (continuous) | 1mW | |
| 6 | Forward current IF (continuous) | 200μA | |
| 7 | Electrostatic Discharge Sensitivity ESD | ≥300V | |
| 8 | Pigtail Tension | 3.0N | |
| Serial Number | parameters | Rating Value | |
| Recommendation Working Conditions | 1 | APD chip operating temperature \(T_{\mathrm{th}}\) | -50℃~-30℃ |
| 2 | Reverse DC bias voltage \(V_{\mathrm{DC}}\) | \(V_{\mathrm{BR}}\)+1V to \(V_{\mathrm{DC}}\)+5V | |
Voltage(V)
Fig.1 Photocurrent and dark current curves
Fig.2 Temperature coefficient of breakdown voltage
bottom view
| PIN# | Sym. | Description |
| 1 | P | P (Anode) |
| 2 | G | Ground |
| 3 | N | N (Cathode) |
Note:If not specifically required, the fiber optic interface is singlemode fiber (0.9mm tight protection tube),fiber length 1.0m