OP300D is an InGaAs avalanche photodiode device.The product is based on the high gain characteristics of the Geiger mode, which multiplies the detected photon Geiger into a macroscopic current.It is designed for single photon detection applications.OP300D adopts TO coaxial pigtail package structure, and the incoming optical interface is single/multimode fiber with FC/UPC connector (0.9mm tight sleeve protection tube).
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Linear mode parameters
| Characteristic parameters | Test conditions(TC=25±5℃ unless otherwise specified) | Minimal | Greatest | Unit |
| Effective detection surface diameter | – | 25 | – | μm |
| Spectral Response Range | – | 950 | 1650 | nm |
| Reverse breakdown voltage \(V_{\mathrm{BR}}\) | IR=10 μA,Φe=0 | 60 | 85 | V |
| Responsiveness \(R_{\mathrm{e}}\) | Φe=1μW,VR=(\(V_{\mathrm{BR}}\)-1)V,λ=1550nm±50nm | 8 | – | A/W |
| Dark Current \(/_{\mathrm{D}}\) | Voc=(\(V_{\mathrm{BR}}\)-1)V,Φe=0 | – | 1 | nA |
| Capacitance \(C_{\mathrm{tot}}\) | Voc=(\(V_{\mathrm{BR}}\)-1)V,f=1MHz | – | 0.6 | pF |
| Temperature coefficient of breakdown voltage η | \(T_{\mathrm{C}}\)=-45～+30℃,\(I_{\mathrm{R}}\)=10μA,\(\varphi_{\mathrm{e}}\)=0 | 0.1 | 0.15 | V/℃ |
Geiger model parameters
| Characteristic parameters | Test Condition | Minimal | Greatest | Unit |
| Single Photon Detection Efficiency PDE | \(T_{\mathrm{A}}\)=-40±5℃,\(f_{\mathrm{g}}\)=10MHz,\(f_{\mathrm{P}}\)=100kHz. DCR=10kHz, λ=1.55μm | 15 | % | |
| Dark Count Rate DCR | T\(_{A}\)=-40±5℃,g=10MHz,fp=100kHz. SPDE=15%,λ=1.55μm | – | 10 | kHz |
| Post-Pulse Probability APP (2us) | T\(_{A}\)=-40±5℃,f\(_{g}\) =10 MHz,f\(_{p}\)=100 kHz, SPDE =15%,△t=1us,λ=1.55μm | – | 2 | % |
| Time Jitter T\(_{J}\) | SPDE=15% | – | 800 | ps |
| Note:λ is the wavelength o incident light,T\(_{A}\) is the value of testtemperature ,μ is the average number of photons per pulse,fgis the frequency of gating signal and fp is the frequency of optical pulse signal. | ||||
| Serial Number | Parameters | Rating Value | |
| Absolutely Maximum Rating | 1 | Storage temperature T\(_{STG}\) | -50℃~+85℃ |
| 2 | Operating ambient temperature T\(_{C}\) | -50℃~60℃ | |
| 3 | Welding temperature T\(_{sld}\)(time) | 260°C(10s) | |
| 4 | Reverse DC bias voltage V\(_{DC}\) | V\(_{BR}\)+5V | |
| 5 | Input optical power φe (continuous) | 1mW | |
| 6 | Forward current IF (continuous) | 200μA | |
| 7 | Electrostatic Discharge Sensitivity ESD | ≥300V | |
| 8 | Pigtail Tension | 3.0N | |
| Serial Number | parameters | Rating Value | |
| Recommendation Working Conditions | 1 | APD chip operating temperature \(T_{\mathrm{th}}\) | -50℃~-30℃ |
| 2 | Reverse DC bias voltage \(V_{\mathrm{DC}}\) | \(V_{\mathrm{BR}}\)+1V to \(V_{\mathrm{DC}}\)+5V | |
Fig.1 Photocurrent and dark current curves
Fig.2 Temperature coefficient of breakdown voltage
bottom view
| PIN# | Sym. | Description |
| 1 | P | P (Anode) |
| 2 | G | Ground |
| 3 | N | N (Cathode) |
Note:If not specifically required, the fiber optic interface is singlemode fiber (0.9mm tight protection tube),fiber length 1.0m