The product responds to near-infrared spectroscopy and has characteristics such as high sensitivity, low noise, and low dark current. It is widely used in various optoelectronic detection fields. The detector consists of an InGaAs photodiode array chip and a CMOS signal processing circuit, which are conductive connected through an indium (In) convex dot array. Each channel inside the readout circuit consists of a charge amplification circuit, a CDS gain circuit, a sampling and holding circuit, a column buffer circuit, and control circuit logic. The input stage adopts a CTIA structure with multiple levels of charge voltage conversion gain, supporting anti corona and correlated double sampling (CDS) noise reduction functions, with two different forms of cooling and non cooling.