The product responds to near-infrared spectroscopy and has characteristics such as large surface area, high responsiveness, and low dark current. It is specifically designed for fields such as spectrometers, machine vision, and optoelectronic detection. The detector consists of an InGaAs photodiode array chip and a CMOS signal processing circuit, which are conductive connected through an indium (In) convex dot array. Each channel inside the readout circuit consists of a charge amplification circuit, a CDS gain circuit, a sample hold circuit, a column buffer circuit, and control circuit logic. The input stage adopts a CTIA structure with multiple levels of charge voltage conversion gain, supports anti corona and correlated double sampling (CDS) noise reduction functions, and is equipped with thermoelectric refrigerating unit.
-Long linear array, large panel, high resolution
-Built-in temperature sensor +TEC cooler
-1×1024 Single line output, suitable for spectrometer
-Support for customizing different shell packaging and micro-assembly optical integration
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| CATEGORY | PRODUCT MODEL | GD-NIR1024L2-MD |
| Linear array Specifications | Component type | InGaAs p-on-n Type |
| Array size | 1×1024 | |
| Pixel size | 25umx500um | |
| Photosensitive surface size | 0.05mmx12.8mm | |
| Packaging forms | Metal-ceramic shell sealing | |
| Photoelectricity Characteristic @22±3℃ | Maximum row frequency | ≥20KHz |
| Maximum pixel readout rate | ≥14MHz | |
| Integration time | ≥10us | |
| Spectral response range | 0.92~1.7um | |
| Readout noise | ≤120e(RMS)@10KHz, High Gain | |
| Dynamic range | ≥60dB | |
| Electric Characteristic | Operating temperature range | -20℃~+60℃ |
| Maximum working power consumption | 300mW ; 8.0W(TEC) | |
| Pixel offset range | -0.5V~0.1V | |
| Esdantistatic grade | 800V~1000V |
-Spectral detection analysis and spectrometer
-Foreign body screening
-Industrial nondestructive testing
-Line-scan imaging
-Medical imaging