InGaAs avalanche photodiode is a product developed specifically for single-photon counting applications.The device operates in the Geiger mode by applying a working voltage higher than the breakdown voltage,and the incident photons generate a large current based on the huge gain inside the avalanche diode to effectively detect a single photon.By combining matched external pulse detection circuits,single photon detection at wavelengths of 0.95-1.65um can be achieved.
The product comes in two packaging structures:T0 coaxial tail fiber and integrated cooling butterfly shape.It can also be customized and developed according to customer application needs.
-High responsiveness
-Low capacitance, low noise
-High operating frequency
-High reliability
522KB
| PARAMETER | TECHNICAL INDEX | TEST CONDITION | |||
| Reverse breakdown voltage | VBR≤90V | \(T_{amb}=25^{\circ}C\pm3^{\circ}C,IR=10\mu A,\Phi e=0\) | |||
| Dark current | ID≤2nA | \(Tamb=25°C\pm3°C,VDC=(VBR1)V,Фe=0\) | |||
| Responsivity | Re ≥8A/W | \(\mathrm{T_{amb}=25^{\circ}C\pm3^{\circ}C~,~\Phi e=1\mu W~,~V_{R}~=~(V~_{BR}-1~)~V~,~\lambda=1550~nm\pm50~nm}\) | |||
| Single photon detector efficiency | PDE≥20% | \(T_{th}=-25^{\circ}C\pm3^{\circ}C,f_{gate}=1.25GHz,DCR\leq1500,AP\leq2.5%,\lambda=1550nm\pm50nm\) | |||
| Dark counting(cps) | Superior | DCR≤500 | \(\mathrm{PDE=20\%~,~T_{th}=-25^{\circ}C\pm3^{\circ}C~,~f_{gate}=1.25GHz~,~f_{laser}=625~kHz~,}\) \(t_{dead}=200ns,T_{laser}\leq60ps,\lambda=1550nm\pm50nm,\mu=1,V_{gate}=10V\) |
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| Moderation | DCR≤800 | ||||
| Prevalence | DCR≤1500 | ||||
| After-pulse ratio | Superior | AP≤1.5% | |||
| Moderation | AP≤2% | ||||
| Prevalence | AP≤2.5% | ||||
| Storage temperature | -50~70℃ | / | |||
| Working temperature | -40~45℃ | / | |||
| Electrostatic discharge sensitivity | 250V | / | |||
| The maximum voltage value of the cooler | 11.9V | / | |||
| The maximum current value of the cooler | 0.8A | / | |||
| \(\mathsf{T}_{\mathrm{th}}\)、\(\mathsf{T}_{\mathrm{amb}}\):They are the working temperature of the SPAD chip ( converted by the thermistor value on the SPAD chip substrate) And the working temperature of the product environment. \(\mathsf{V}_{\mathrm{DC}}\)、\(\mathsf{V}_{\mathrm{BR}}\): The reverse bias voltage and reverse breakdown voltage the SPAD chip are respectively. \(\Phi_{\mathrm{e}}\)、μ: They are the average laser power and the average photon number per pulse, respectively. \(\mathsf{V}_{\mathrm{gate}}\): Amplitude of gate signal. \(\mathsf{f}_{\mathrm{gate}}\)、\(\mathsf{f}_{\mathrm{laser}}\)、\(\mathsf{T}_{\mathrm{laser}}\): The operating frequency, optical pulse frequency and optical pulse width of the SPAD chip are respectively. \(\mathsf{t}_{\mathrm{dead}}\): SPAD chip dead time. |
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-High speed fiber optic communication
-Optical fiber sensing
-Fast light pulse detection
-Laser ranging
-Single-photon detection
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